Journals
M. Itrat B. Shams, K. M. Masum Habib, Q. D. M. Khosru, A. N. M. Zainuddin and A. Haque, "On the Physically Based Compact Gate C–V Model for Ultrathin Gate Dielectric MOS Devices Using the Modified Airy Function Approximation," IEEE transaction on Electron Devices, vol. 54, no. 9, September 2007. Download
Abstract: The exponent of the modified Airy function solution of the quantized energy levels in the MOS potential well, used in the physically based, quantummechanical (QM) compact gate C-V model of Li has been found to be dependent on the barrier height at the Si-dielectric interface and the substrate doping density. An empirical equation is proposed for considering these effects. Comparison with experimental C-V data of MOS devices with high- k gate dielectrics shows that inclusion of these effects in the compact C-V model is necessary for accurate simulation of MOSFETs with high-k gate dielectrics.
M. Itrat B. Shams, Q. D. M. Khosru and A. Haque, "Impact of uniaxial strain on gate C-V characteristics of metal-oxide-semiconductor devices ," (Submitted in Journal of Applied Physics).
Conference Papers
Md. Itrat Bin Shams, Md. Kawsar Alam and Quazi D. M. Khosru, "Effects of Uniaxial Strain on the Gate Capacitance of Double Gate MOSFETs," Proceedings of IEEE International Conference on Electron Devices and Solid-State Circuit 2008 (IEEE EDSSC), Hong Kong. Download
Md. Itrat Bin Shams, Quazi Deen Mohd Khosru and Anisul Haque,"Gate C-V Characteristics of Si MOSFETs with Uniaxial Strain Along <110> Direction," Proceedings of the International Conference on Electrical and Computer Engineering 2008 (ICECE), Dhaka, Bangladesh. Download
Md. Itrat Bin Shams, "Signature Recognition by Segmentation and Regular line Detection," Proceedings of the IEEE Tencon 2007, Taiwan. Download
Md. Itrat Bin Shams, K. M. Masum Habib, Rajib Mikail, Quazi Deen Mohd Khosru, A. N. M. Zainuddin and A. Haque,"An Improved Physically Based Compact C-V Model for Mos Devices with High-K Gate Dielectrics," Proceedings of the International Conference on Electrical and Computer Engineering 2006 (ICECE), Dhaka, Bangladesh. (Best Student Paper Award). Download
Md. Itrat Bin Shams, "Improved Compact Gate C-V Model for High-k gate Dielectrics Using Modified Airy Function Solution", Proceedings of the Student Paper Contest 2007, IEEE Electron Devices Society Bangladesh Chapter.